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PDF IRFS9N60APBF Data sheet ( Hoja de datos )
| Número de pieza | IRFS9N60APBF | |
| Descripción | SMPS MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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SMPS MOSFET
PD - 95538
IRFS9N60APbF
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High Speed Power Switching
l Lead-Free
VDSS
600V
RDS(on) max
0.75Ω
ID
9.2A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
G DS
D2Pak
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
9.2
5.8
37
170
1.3
± 30
5.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Applicable Off Line SMPS Topologies:
l Active Clamped Forward
l Main Switch
Notes through
are on page 9
www.irf.com
1
7/21/04
1 page  
IRFS9N60APbF
10.0
8.0
6.0
4.0
2.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
t2
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFS9N60APBF.PDF ] | |
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