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FPD1500SOT89 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Filtronic - HIGH LINEARITY PACKAGED PHEMTT

شماره قطعه FPD1500SOT89
شرح مفصل HIGH LINEARITY PACKAGED PHEMTT
تولید کننده Filtronic 
آرم Filtronic 


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FPD1500SOT89 شرح
FPD1500SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
PERFORMANCE (1850 MHz)
27.5 dBm Output Power (P1dB)
17 dB Small-Signal Gain (SSG)
1.2 dB Noise Figure
42 dBm Output IP3
50% Power-Added Efficiency
Evaluation Boards Available
Available in Lead Free Finish: FPD1500SOT89E
DESCRIPTION AND APPLICATIONS
The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25 x 1500 μm Schottky barrier Gate, defined by high-
resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD1500 is available in die form and in other
packages. Typical applications include drivers or output stages in PCS/Cellular base station high-
intercept-point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL
Power at 1dB Gain Compression
P1dB
VDS = 5.0V; IDS = 50% IDSS
26.0 27.5
Small-Signal Gain
SSG
VDS = 5.0V; IDS = 50% IDSS
15.5 17
Power-Added Efficiency
PAE
VDS = 5.0V; IDS = 50% IDSS
50
POUT = P1dB
Noise Figure
NF VDS = 5.0V; IDS = 50% IDSS
1.2
VDS = 5.0V; IDS = 50% IDSS
38 40
Output Third-Order Intercept Point IP3
Matched for best P1dB
(from 15 to 5 dB below P1dB)
Matched for best IP3 at 50% IDSS
42
Max
1.5
Units
dBm
dB
%
dB
dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 1.5 mA
IGS = 1.5 mA
IGD = 1.5 mA
375 465 550 mA
750 mA
400 mS
1 15 μA
0.7 1.0 1.3
V
12 16
V
12 16
V
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised11/11/05
Email: sales@filcsi.com

قانون اساسیصفحه 11
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