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PDF FPD1500SOT89 Data sheet ( Hoja de datos )
| Número de pieza | FPD1500SOT89 | |
| Descripción | HIGH LINEARITY PACKAGED PHEMTT | |
| Fabricantes | Filtronic | |
| Logotipo |  |
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FPD1500SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
• PERFORMANCE (1850 MHz)
♦ 27.5 dBm Output Power (P1dB)
♦ 17 dB Small-Signal Gain (SSG)
♦ 1.2 dB Noise Figure
♦ 42 dBm Output IP3
♦ 50% Power-Added Efficiency
♦ Evaluation Boards Available
♦ Available in Lead Free Finish: FPD1500SOT89E
• DESCRIPTION AND APPLICATIONS
The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25 x 1500 μm Schottky barrier Gate, defined by high-
resolution stepper-based photolithography. The recessed and offset Gate structure minimizes
parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a
range of bias conditions and input power levels. The FPD1500 is available in die form and in other
packages. Typical applications include drivers or output stages in PCS/Cellular base station high-
intercept-point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ
RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL
Power at 1dB Gain Compression
P1dB
VDS = 5.0V; IDS = 50% IDSS
26.0 27.5
Small-Signal Gain
SSG
VDS = 5.0V; IDS = 50% IDSS
15.5 17
Power-Added Efficiency
PAE
VDS = 5.0V; IDS = 50% IDSS
50
POUT = P1dB
Noise Figure
NF VDS = 5.0V; IDS = 50% IDSS
1.2
VDS = 5.0V; IDS = 50% IDSS
38 40
Output Third-Order Intercept Point IP3
Matched for best P1dB
(from 15 to 5 dB below P1dB)
Matched for best IP3 at 50% IDSS
42
Max
1.5
Units
dBm
dB
%
dB
dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 1.5 mA
IGS = 1.5 mA
IGD = 1.5 mA
375 465 550 mA
750 mA
400 mS
1 15 μA
0.7 1.0 1.3
V
12 16
V
12 16
V
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised11/11/05
Email: [email protected]
1 page  
FPD1500SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
25.00
23.00
21.00
19.00
17.00
15.00
-1.00
Typical Intermodulation Performance
VDS = 5V IDS = 50% IDSS at f = 1.85GHz
-10.00
-15.00
-20.00
-25.00
-30.00
-35.00
-40.00
-45.00
-50.00
-55.00
1.00 3.00 5.00 7.00 9.00 11.00
Input Power (dBm)
Pout
Im3, dBc
Note: pHEMT devices exhibit non-classical intermodulation performance, with equivalent IPvalues
exceeding 14 dB above P1dB. This IMD enhancement is affected by the quiescent bias current, the
Drain-Source voltage, and the tuning or matching applied to the device.
Maximum Stable Gain & S21
FPD1500SOT89 5V / 50%IDSS
35
30 MSG
S21
25
20
15
10
5
0
0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8
Frequency (GHz)
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised11/11/05
Email: [email protected]
5 Page 
FPD1500SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
• STATISTICAL SAMPLE OF RF PERFORMANCE
14000
12000
10000
8000
6000
4000
2000
0
13
Small Signal Gain
14 15 16 17 18
Gain (dB)
Noise Figure
6000
5000
4000
3000
2000
1000
0
0.6 0.7 0.8 0.9
1
1.1 1.2 1.3
NF (dB)
Output Power at 1dB Gain Compression
14000
12000
10000
8000
6000
4000
2000
0
23 24 25 26 27 28
P1dB (dBm)
6000
5000
4000
3000
2000
1000
0
30
Output 3rd-Order Intercept Point
32 34 36 38 40 42 44
IP3 (dBm)
The histograms above represent a sample of over 20,000 representative devices. The devices were
tested by a high-speed automatic test system, in a matched circuit based on the EB1500SOT89AA
Evaluation Board design (see the Website for a schematic). This circuit is a dual-bias single-pole
lowpass topology, and the devices were biased at VDS = 4.5V, IDS = 120mA. The performance data is
summarized below:
Parameter
Median
Standard
Deviation
Test Limit
CPK
Small-Signal Gain
15.5
0.20
14.5
1.7
Noise Figure
0.91
0.03
1.20
3.2
Output Power (P1dB)
25.2
0.25
24.5
0.93
3rd-Order Intercept
38.7
1.1
36.5 0.67
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised11/11/05
Email: [email protected]
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet FPD1500SOT89.PDF ] | |
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