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FPD1500DFN Datasheet دیتاشیت PDF دانلود

دیتاشیت - Filtronic - HIGH LINEARITY PACKAGED PHEMTT

شماره قطعه FPD1500DFN
شرح مفصل HIGH LINEARITY PACKAGED PHEMTT
تولید کننده Filtronic 
آرم Filtronic 


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FPD1500DFN شرح
FPD1500DFN
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Datasheet v2.1
FEATURES (1850MHZ):
27 dBm Output Power (P1dB)
18 dB Small-Signal Gain (SSG)
1.2 dB Noise Figure
42 dBm Output IP3
45% Power-Added Efficiency
RoHS compliant (Directive 2002/95/EC)
PACKAGE:
GENERAL DESCRIPTION:
The FPD1500DFN is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 µm x 750 µm Schottky barrier
Gate, defined by high-resolution stepper-
based photolithography. The recessed and
offset Gate structure minimizes parasitics to
optimize performance, with an epitaxial
structure designed for improved linearity over
a range of bias conditions and input power
levels.
TYPICAL APPLICATIONS:
Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
High intercept-point LNAs
WLL and WLAN systems, and other types
of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
Power at 1dB Gain Compression
P1dB
Small-Signal Gain
SSG
CONDITIONS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
MIN
TYP
27
18
MAX
UNITS
dBm
dB
Power-Added Efficiency
Noise Figure
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
PAE
NF
IP3
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
VDS = 5 V; IDS = 50% IDSS;
POUT = P1dB
VDS = 5 V; IDS = 50% IDSS
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
Matched for best IP3
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 1.5 mA
IGS = 1.5 mA
IGD = 1.5 mA
45 %
1.2 dB
40 dBm
42
375
465 550
mA
750 mA
400 mS
1 15 μA
0.7 0.9 1.3 V
12 16
V
12 16
V
Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)
Tel: +44 (0) 1325 301111
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com

قانون اساسیصفحه 10
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