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PDF FPD10000V Data sheet ( Hoja de datos )
| Número de pieza | FPD10000V | |
| Descripción | 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS | |
| Fabricantes | Filtronic | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FPD10000V (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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PRELIMINARY
FPD10000V
10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS
• PERFORMANCE (3.5 GHz)
(802.16-2004 WiMAX Modulation)
♦ 30 dBm Output Power, < 2.5% EVM
♦ 9.5 dB Power Gain
♦ Class AB Efficiency 10% (10V / 1A IDQ)
♦ Class B Efficiency 18% (8V / 300 mA IDQ)
♦ 39 dBm CW Output Power
♦ > 48 dBm 3rd Order Intercept Point
DRAIN
BOND PAD
(16X)
GATE
BOND PAD
(16X)
♦ Plated Source Vias – No Source wirebonds needed
♦ 2.5 and 3.5 GHz Evaluation boards available (packaged device)
DIE SIZE (µm): 3750 x 750
DIE THICKNESS: 50µm
BONDING PADS (µm): >70 x 60
SEE BONDING DIAGRAM BELOW
• DESCRIPTION AND APPLICATIONS
The FPD10000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for WiMAX (WMAN) IEEE 802.16 power amplifiers.
The device can be biased from Class C (IDQ < 200 mA), to Class A (IDQ = 1.0 – 1.5 A) to deliver
optimal linear power over the desired output power range. The FPD10000V is also available in
packaged form.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ Max Units
RF SPECIFICATIONS MEASURED AT f = 3.5 GHz
Power at 1dB Gain Compression
CW Single Tone
Power Gain at dB Gain Compression
CW Single Tone
P1dB
G1dB
VDS = 10V; IDQ = 1.0 A
ΓS and ΓL tuned for Optimum IP3
VDS = 10V; IDQ = 1.0 A
Class AB Mode
39.5
9.5
dBm
dB
Channel Power with 802.16-2004
2.5% max. EVM
Channel Power with 802.16-2004
2.5% max. EVM
Power-Added Efficiency
802.16-2004 modulation
PCH
PCH
Eff
Class AB Mode
VDS = 10 V; IDQ = 1.0 A
Class B Mode
VDS = 8 V; IDQ = 350 mA typ.
Class AB Mode
Class B Mode
31.0 31.5
29.5 30
10
20
dBm
dBm
%
Saturated Drain-Source Current
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity
IDSS
IGSO
|VP|
|VBDGD|
ΘCC
VDS = 1.3 V; VGS = 0 V
VGS = -3 V
VDS = 1.3 V; IDS = 19 mA
IGD = 19 mA
See Note on following page
5.2
3
1.1
30 35
3.5
A
mA
V
V
°C/W
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http:/www.filtronic.co.uk/semis
Revised: 8/5/05
Email: [email protected]
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet FPD10000V.PDF ] | |
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