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Número de pieza | FMS2018 | |
Descripción | SP7T GaAs Multi-Band GSM - UMTS Antenna Switch | |
Fabricantes | Filtronic | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FMS2018 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Advanced Product Information 1.2
FMS2018
SP7T GaAs Multi-Band GSM – UMTS Antenna Switch
Features:
Functional Schematic
♦ Available in die form
♦ Suitable for multi-band GSM/DCS/PCS/
EDGE and UMTS applications
♦ Excellent low control voltage performance
♦ Excellent harmonic performance under
GSM/DCS/PCS power levels
♦ Very high Tx-Rx isolation >35dB typ. at
1.8GHz
♦ Very high Tx-Tx isolation >30dB typ. at
1.8GHz
♦ Very low Tx Insertion loss
♦ Very low control current
RX1 RX2 RX3 RX4
TX2
VTX2
TX1
VTX1
TX3
VTX3
ANT VRXC
VRX1
VRX2
VRX3
VRX4
Description and Applications:
The FMS2018 is a low loss, high power and linear single pole seven throw Gallium Arsenide antenna
switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05
0.5µm switch process technology which offers leading edge performance optimised for switch
applications. The FMS2018 is designed for use in dual/tri and quad-band GSM handset antenna
switch modules and RF front-end modules.
Electrical Specifications: (TAMBIENT = 25°C,Vcontrol = 0V/2.5V, ZIN = ZOUT = 50Ω)
Parameter
Test Conditions
Min Typ Max
Tx Insertion Loss
0.5 – 1.0 GHz
1.0 – 2.0 GHz
Rx Insertion Loss
0.5 – 1.0 GHz
1.0 – 2.0 GHz
Return Loss
0.5 – 2.5 GHz
Isolation
TX-RX
0.5 – 1.0 GHz
1.0 – 2.0 GHz
Isolation
TX-TX
0.5 – 1.0 GHz
1.0 – 2.0 GHz
2nd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +33 dBm, 100% Duty Cycle
3rd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +33 dBm, 100% Duty Cycle
Switching speed : Trise, Tfall
10% to 90% RF and 90% to 10% RF
Ton, Toff
50% control to 90% RF and 50% control to 10% RF
Note: External DC blocking capacitors are required on all RF ports (typ: 100pF)
0.5
0.6
0.6
0.8
20
40
35
33
30
-75
-75
-75
-75
< 0.3
< 1.0
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected]
Website: www.filcs.com
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBc
dBc
dBc
dBc
µs
µs
1 page Advanced Product Information 1.2
FMS2018
Preferred Assembly Instructions:
GaAs devices are fragile and should be handled with great care. Specially designed collets should be
used where possible.
The back of the die is not metallised and the recommended mounting method is by the use of
conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid
encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height.
For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1
LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in
an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with
dry nitrogen.
This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is
recommended that 25.4µm diameter gold wire is used. Thermosonic ball bonding is preferred. A
nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective
results for 25um wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique,
stage temperature should not be raised above 200°C and bond force should not be raised above 60g.
Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve
good wire bonds.
Bonds should be made from the die first and then to the mounting substrate or package. The physical
length of the bondwires should be minimised especially when making RF or ground connections.
Handling Precautions:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No.
22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-
HDBK-263.
Disclaimers:
This product is not designed for use in any space based or life sustaining/supporting equipment.
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: [email protected]
Website: www.filcs.com
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet FMS2018.PDF ] |
Número de pieza | Descripción | Fabricantes |
FMS2010 | SP6T GaAs Multi-Band GSM Antenna Switch | FILTRONIC |
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