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PDF SCP-4926 Data sheet ( Hoja de datos )
| Número de pieza | SCP-4926 | |
| Descripción | HV MOSFET Power Module | |
| Fabricantes | Sensitron | |
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 1138, REV. D
HV MOSFET Power Module
Data Sheet
SCP-4926
DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
POWER MOSFETS Q1,…,6
Drain-to-Source Breakdown Voltage for
each one of Q1,2,…,6
Drain-to-Source Leakage Current
V (BR)DSS
IDSS
Continuous Drain Current
Maximum Pulsed Drain Current (1)
ID
IDM
(AT Tj=250C UNLESS OTHERWISE SPECIFIED)
CONDITION
MIN TYP MAX
UNIT
VGS=0V,ID=0.5 mA,
Tj = 25 oC
VGS=0V,
VDS=1000V, Tj = 25 oC
VDS=1000V, Tj = 125 oC
VGS=10V
TC = 25 oC
1000
-
-
-
-
-
-
-
-
0.250
2
1
4
V
mA
A
A
Gate-Source Threshold Voltage
V GS(th)
Static Drain-to-Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
Total Gate Charge
RDS
Ciss
Coss
Crss
QG
Turn-on Delay
Rise Time
Turn-off Delay
Fall Time
Junction to Base Thermal Resistance
Nominal Gate-to-source Zener Breakdown
Voltage, IZ = 1mA
Operating and
Storage
Junction
Temperature
td(on)
tr
td(off)
tf
Rthjc
VZ
Tj
VDS = VGS
ID = 0.50mA
VGS = 10 V, ID = 0.80 A
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VGS = 10 V, ID = 1 A,
VDD = 400 V
VDD = 500 V, VGS = 10 V,
ID = 1.0 A
Operating Case Temperature
Tj
Pin-To-Base plate Voltage Isolation
Viso
DIODE CHARACTERISTICSD1, D2, D3
1 minute, at sea level
Forward Voltage
VF IF = 1A
Reverse Recovery Time
trr Tj = 25 oC, IF = 1 A,
di/dt = 50 A/ µs, Vrr=400V
GATE DRIVE MOSFETs Q7,…,18 (1) CHARACTERISTICS
Turn-On Time
Turn-Off Time
Notes,
ton
toff
1- Type 2N7002 or similar.
2.0
-
-
-
±17.5
-40
-40
-
-
-
-
-
500
52
17
10
17
58
31
±18.0
-
-
-
-
4.0
11.0
-
38
-
3.7
±19.0
100
100
10,000
1.1
150
20
20
V
Ω
pF
nC
ns
oC/W
V
oC
oC
V
V
ns
ns
ns
• 221 West Industry Court 3 Deer Park, NY 11729-4681 3 Phone (631) 586 7600 Fax (631) 242 9798 •
1 page | ||
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| PDF Descargar | [ Datasheet SCP-4926.PDF ] | |
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