DataSheetWiki


NGA-489 fiches techniques PDF

Sirenza Microdevices - InGaP/GaAs HBT MMIC Amplifier

Numéro de référence NGA-489
Description InGaP/GaAs HBT MMIC Amplifier
Fabricant Sirenza Microdevices 
Logo Sirenza Microdevices 





1 Page

No Preview Available !





NGA-489 fiche technique
Product Description
Sirenza Microdevices’ NGA-489 is a high performance InGaP/
GaAs HBT MMIC Amplifier. A Darlington configuration designed
with InGaP process technology provides broadband performance
up to 10 GHz with excellent thermal perfomance. The
heterojunction increases breakdown voltage and minimizes
leakage current between junctions. Cancellation of emitter
junction non-linearities results in higher suppression of
intermodulation products. At 850 Mhz and 65mA , the NGA-
489 typically provides +38.0 dBm output IP3, 15 dB of gain,
and +17.2 dBm of 1dB compressed power using a single positive
voltage supply. Only 2 DC-blocking capacitors, a bias resistor
and an optional RF choke are required for operation.
Gain & Return Loss vs. Freq. @TL=+25°C
(From de-imbedded S-parameters)
20 0
GAIN
15
-10
IRL
10
-20
5
ORL
-30
0 -40
0 1 2 3 4 5 6 7 8 9 10
Frequency (GHz)
NGA-489
0.5-10 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
OBSOLETE
See Application Note AN-059 for Alternates
Product Features
• High Gain : 14.5 dB at 1950 MHz
• Cascadable 50 Ohm
• Patented InGaP Technology
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
G Small Signal Gain
P1dB
Output Power at 1dB Compression
OIP3 Output Third Order Intercept Point
Bandwidth Determined by Return Loss (>10dB)
IRL Input Return Loss
Units
dB
dBm
dBm
MHz
dB
Frequency
850 MHz
1950 MHz
2400 MHz
850 MHz
1950 MHz
850 MHz
1950 MHz
1950 MHz
Min.
13.5
Typ.
15.0
14.5
14.2
17.2
17.0
38.0
37.0
10000
19.7
Max.
16.0
ORL Output Return Loss
dB 1950 MHz
27.0
NF Noise Figure
dB 1950 MHz
4.0
VD Device Operating Voltage
V
3.6 4.0
4.4
ID Device Operating Current
mA
59 65 71
RTH, j-l Thermal Resistance (junction to lead)
Test Conditions:
VS = 8 V
RBIAS = 62 Ohms
ID = 65 mA Typ.
TL = 25ºC
°C/W
145
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-100375 Rev OBS

PagesPages 5
Télécharger [ NGA-489 ]


Fiche technique recommandé

No Description détaillée Fabricant
NGA-486 Cascadable InGap/GaAS HBT MMIC Amplifier Sirenza Microdevices
Sirenza Microdevices
NGA-489 InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices
Sirenza Microdevices

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche