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PDF 2SB744 Data sheet ( Hoja de datos )
| Número de pieza | 2SB744 | |
| Descripción | PNP SIlicon Power Transistor | |
| Fabricantes | MCC | |
| Logotipo |  |
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MCC
omponents
20736 Marilla Street Chatsworth
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Features
• Capable of 10Watts of Power Dissipation.
• Collector-current 3.0A
• Collector-base Voltage 70V
• Operating and storage junction temperature range: -55OC to
+150OC
2SB744
PNP Silicon
Power Transistor
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
45
70
5.0
3.0
10
-55 to +150
-55 to +150
Unit
V
V
V
A
W
OC
OC
A
D
E
K
R
B
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Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
VCEO(SUS)
V(BR)CBO
V(BR)EBO
Collector-Emitter Sustaining Voltage
(IC=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=1.0mAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=1.0mAdc, IC=0)
ON CHARACTERISTICS
45 --- Vdc
70 --- Vdc
5.0 --- Vdc
hFE(1)
hFE(2)
VCE(sat)
Forward Current Transfer ratio
(IC=20mAdc, VCE=5.0Vdc)
Forward Current Transfer ratio
(IC=0.5Adc, VCE=5.0Vdc)
Collector-Emitter Saturation Voltage
(IC=1.5Adc, IB=0.15Adc)
30 --- ---
60 320 ---
--- 2.0 Vdc
F MN
G
P
L
HC
12 3
!
J J PIN 1.
PIN 2.
PIN 3.
EMITTER Q
COLLECTOR
BASE
Revision: 2
www.mccsemi.com
2003/04/30
1 page | ||
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| PDF Descargar | [ Datasheet 2SB744.PDF ] | |
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