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Numéro de référence | KSC2223 | ||
Description | High Frequency Amplifier | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
KSC2223
High Frequency Amplifier
• Very small size to assure good space factor in Hybrid IC applications
• fT=600MHz (TYP) at IC=1mA
• Cob=1pF (TYP) at VCB=6V
• NF=3dB (TYP) at f=100MHz
3
2
1 SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
20
4
20
150
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
hFE
VCE (sat)
Cob
fT
Cc·rbb
Collector Cut-off Current
DC Current Gain
Collector Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Time Constant
VCB=30V, IE=0
VCE=6V, IC=1mA
IC=10mA, IB=1mA
VCB=6V, IE=0, f=1MHz
VCE=6V, IC=1mA
VCB=6V, IC=1mA
f=31.9MHz
NF Noise Figure
VCE=6V, IC=1mA
f=100MHz, RS=50Ω
Min.
40
400
Typ.
90
0.1
1
600
12
3
Max.
0.1
180
0.3
Units
µA
V
pF
MHz
ps
dB
hFE Classification
Classification
hFE
R
40 ~ 80
Marking
O
60 ~ 120
Y
90 ~ 180
H5O
hFE grade
©2002 Fairchild Semiconductor Corporation
Rev. A3, September 2002
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Pages | Pages 5 | ||
Télécharger | [ KSC2223 ] |
No | Description détaillée | Fabricant |
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