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Numéro de référence | G2N7002 | ||
Description | N-CHANNELTRANSISTOR | ||
Fabricant | GTM | ||
Logo | |||
G2N7002
N-CHANNEL TRANSISTOR
Description
N-channel enhancement-mode MOS TRANSISTOR
Package Dimensions
1/3
Absolute Maximum Ratings at Ta = 25
Parameter
Operating Junction and Storage Temperature Range
Symbol
Tj, Tstg
Drain-Source Voltage
Gate-Source Voltage
- Continuous
- Non-repetitive (tp 50us)
Continuous Drain Current
Ta=25 (1)
Ta=100 (1)
Pulsed Drain Current (Ta=25 ) (2)
Power Dissipation
Ta=25
Ta=100
Thermal Resistance ,Junction-to-Ambient
VGS
VGSM
ID
IDM
PD
RthJA
Characteristics at Ta = 25
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Symbol
BVDSS
VGS(th)
IGSS
Idss
ID(ON)
Static Drain-Source on-State Resistance RDS(ON)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
GFS
Ciss
Coss
Crss
Min.
60
1
-
-
500
-
-
-
-
80
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
-55 ~ +150
60
20
40
115
73
800
0.2
0.08
625
Unit
V
V
V
mA
mA
W
/W
Max.
-
2.5
100
1
-
7.5
13.5
7.5
13.5
-
50
25
5
Unit
V
V
nA
uA
mA
mS
pF
pF
pF
Test Conditions
VGS=0, ID=10uA
VDS=2.5V, ID=0.25mA
VGS= 20V, VDS=0
VDS=60V, VGS=0
VDS =7.5V ,VGS=10V
Id=50mA, VGS=5V
25
125
Id=500mA, VGS=10V
25
125
VDS>2 VDS(ON), ID=200mA
VDS=25V, VGS=0V, f=1MHz
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Pages | Pages 3 | ||
Télécharger | [ G2N7002 ] |
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