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PDF ZTX749 Data sheet ( Hoja de datos )
| Número de pieza | ZTX749 | |
| Descripción | PNP Low Saturation Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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ZTX749
PNP Low Saturation Transistor
• This device are designed with high current gain and low saturation
voltage with collector currents up to 2A continuous.
CBE TO-226
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
-25
VCBO
Collector-Base Voltage
-35
VEBO
Emitter-Base Voltage
-5
IC
Collector Current
- Continuous
-2
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BVCEO
BVCBO
BVEBO
ICBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IEBO
Emitter Cutoff Current
On Characteristics*
IC = -10mA
IC = -100µA
IE = -100µA
VCB = -30V
VCB = -30V, TA = 100°C
VEB = -4V
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
Small-Signal Characteristics
IC = -50mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -2A, VCE = -2V
IC = -6A, VCE = -2V
IC = -1A, IB = -100mA
IC = -2A, IB = -200mA
IC = -1A, IB = -100mA
IC = -1A, VCE = -2V
Cobo
fT
Output Capacitance
Transition Frequency
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
VCB = -10V, IE = 0, f = 1MHz
IC = 1-00mA, VCE = -5V
f = 100MHz
Min.
-25
-35
-5
70
100
75
15
100
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
RθJA
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Max.
1
125
Units
V
V
V
A
°C
Max. Units
-100
-10
-100
V
V
V
nA
µA
nA
300
-300
-500
-1.25
-1
mV
V
V
100 PF
Units
W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, August 2003
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ZTX749.PDF ] | |
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