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CEU6601 Datasheet دیتاشیت PDF دانلود

دیتاشیت - CET - P-Channel Enhancement Mode Field Effect Transistor

شماره قطعه CEU6601
شرح مفصل P-Channel Enhancement Mode Field Effect Transistor
تولید کننده CET 
آرم CET 


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CEU6601 شرح
CED6601/CEU6601
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-60V, -16A, RDS(ON) = 86m@VGS = -10V.
RDS(ON) = 125m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
-60
±20
-16
-64
42
0.33
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2006.Oct
http://www.cetsemi.com

قانون اساسیصفحه 4
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