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Numéro de référence | CED3252 | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | CET | ||
Logo | |||
CED3252/CEU3252
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 25A, RDS(ON) = 28mΩ @VGS = 10V.
RDS(ON) = 39mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
30
±20
25
100
31
0.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
4
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Rev 1. 2005.December
1
http://www.cetsemi.com
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Pages | Pages 4 | ||
Télécharger | [ CED3252 ] |
No | Description détaillée | Fabricant |
CED3252 | N-Channel Enhancement Mode Field Effect Transistor | CET |
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