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CED01N6 fiches techniques PDF

CET - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CED01N6
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant CET 
Logo CET 





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CED01N6 fiche technique
CED01N6/CEU01N6
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
650V, 0.9A, RDS(ON) = 15 @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
650
±30
0.9
3.6
31
0.25
Single Pulsed Avalanche Energy d
Avalanche Current
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
60
0.8
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
4
50
Units
V
V
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Rev 1. 2005.Decemcer
1
http://www.cetsemi.com

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