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PDF CEBF630B Data sheet ( Hoja de datos )
| Número de pieza | CEBF630B | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | CET | |
| Logotipo |  |
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CEPF630B/CEBF630B
CEIF630B/CEFF630B
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEPF630B
CEBF630B
CEIF630B
CEFF630B
VDSS
200V
200V
200V
200V
RDS(ON)
0.4Ω
0.4Ω
0.4Ω
0.4Ω
ID @VGS
9A 10V
9A 10V
9A 10V
9A e 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
DG
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS
VGS
ID
IDM f
200
±30
9
36
9e
36 e
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
74 35
PD 0.59 0.28
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
EAS 150 150
IAS 9 9
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.7
62.5
3.6
65
Units
C/W
C/W
2004.November
4 - 194
http://www.cetsemi.com
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CEBF630B.PDF ] | |
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