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PDF CEB13N07 Data sheet ( Hoja de datos )
| Número de pieza | CEB13N07 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | CET | |
| Logotipo |  |
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CEP13N07/CEB13N07
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
70V, 13A, RDS(ON) = 125mΩ @VGS = 10V.
RDS(ON) = 150mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
70
±20
13
52
45
0.3
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
EAS 85
IAS 11
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3.35
62.5
Units
C/W
C/W
2004.November
4 - 54
http://www.cetsemi.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CEB13N07.PDF ] | |
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