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PDF CEB10N4 Data sheet ( Hoja de datos )
| Número de pieza | CEB10N4 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | CET | |
| Logotipo |  |
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CEP10N4/CEB10N4
CEI10N4/CEF10N4
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP10N4
CEB10N4
CEI10N4
CEF10N4
VDSS
450V
450V
450V
450V
RDS(ON)
0.7Ω
0.7Ω
0.7Ω
0.7Ω
ID
10A
10A
10A
10A e
@VGS
10V
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS
VGS
ID
IDM f
450
±30
10
40
10 e
40 e
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
125 45
PD 1.0 0.36
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
EAS 450 450
IAS 10 10
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.0
62.5
2.8
65
Units
C/W
C/W
2002.September
4 - 50
http://www.cetsemi.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CEB10N4.PDF ] | |
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