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Número de pieza | CEB02N6A | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | CET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CEB02N6A (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! CEP02N6A/CEB02N6A
CEI02N6A/CEF02N6A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP02N6A
VDSS
650V
CEB02N6A 650V
CEI02N6A
650V
CEF02N6A 650V
RDS(ON)
7.5Ω
7.5Ω
7.5Ω
7.5Ω
ID
1.5A
1.5A
1.5A
1.5A e
@VGS
10V
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 650
VGS ±30
ID 1.5 1.5 e
IDM f
4.5 4.5 e
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
42 28
PD 0.33 0.22
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
EAS 90 90
IAS 1.4 1.4
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3
62.5
4.5
65
Units
C/W
C/W
2003.December
4-6
http://www.cetsemi.com
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CEB02N6A.PDF ] |
Número de pieza | Descripción | Fabricantes |
CEB02N6 | N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | CET |
CEB02N65A | N-Channel Enhancement Mode Field Effect Transistor | CET |
CEB02N65G | N-Channel Enhancement Mode Field Effect Transistor | CET |
CEB02N6A | N-Channel Enhancement Mode Field Effect Transistor | CET |
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