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Numéro de référence | CEP02N7 | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | CET | ||
Logo | |||
CEP02N7/CEB02N7
CEI02N7/CEF02N7
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP02N7
CEB02N7
CEI02N7
CEF02N7
VDSS
700V
700V
700V
700V
RDS(ON)
6.6Ω
6.6Ω
6.6Ω
6.6Ω
ID
1.9A
1.9A
1.9A
1.9A e
@VGS
10V
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
DG
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS
VGS
ID
IDM f
700
±30
1.9
6
1.9 e
6e
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
60 32
PD 0.48 0.26
Single Pulsed Avalanche Energy d
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
EAS 125 125
IAR 2 2
EAR 5.4 5.4
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.1
62.5
3.9
65
Units
V
V
A
A
W
W/ C
mJ
A
mJ
C
Units
C/W
C/W
2004.October
4 - 10
http://www.cetsemi.com
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Pages | Pages 4 | ||
Télécharger | [ CEP02N7 ] |
No | Description détaillée | Fabricant |
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