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PDF CEP01N6 Data sheet ( Hoja de datos )
| Número de pieza | CEP01N6 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | CET | |
| Logotipo |  |
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CEP01N6/CEB01N6
CEI01N6/CEF01N6
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP01N6
CEB01N6
CEI01N6
CEF01N6
VDSS
650V
650V
650V
650V
RDS(ON)
15Ω
15Ω
15Ω
15Ω
ID @VGS
1A 10V
1A 10V
1A 10V
1A e 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.
G
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEI SERIES
TO-262(I2-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263/262 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS
VGS
ID
IDM f
650
±30
1
4
1e
4e
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
36 28
PD 0.29 0.22
Single Pulsed Avalanche Energy d
EAS 60
Repetitive Avalanche Current
IAS 0.8
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3.5
62.5
4.5
65
Units
C/W
C/W
Rev 1. 2005.December
1
http://www.cetsemi.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CEP01N6.PDF ] | |
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