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PDF FJE5304D Data sheet ( Hoja de datos )
| Número de pieza | FJE5304D | |
| Descripción | NPN Triple Diffused Planar Silicon Transistor | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FJE5304D
NPN Triple Diffused Planar Silicon Transistor
High Voltage High Speed Power Switch Application
• Wide Safe Operating Area
• Built-in Free Wheeling diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
Equivalent Circuit
C
1 TO-126
1.Emitter 2.Collector 3.Base
B
E
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
* Base Current (Pulse)
Collector Dissipation (TC=25°C)
Storage Temperature
* Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0%
Value
700
400
12
4
8
2
4
30
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
°C
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICES
ICEO
IEBO
hFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
IC = 1mA, IE = 0
IC = 5mA, IB = 0
IE = 1mA, IC = 0
VCE = 700V, VEB = 0
VCE = 400V, IB = 0
VEB = 12V, IC = 0
VCE = 5V, IC = 10mA
VCE = 5V, IC = 2A
Min.
700
400
12
10
8
Typ.
Max.
100
250
100
40
Units
V
V
V
µA
µA
µA
©2005 Fairchild Semiconductor Corporation
FJE5304D Rev. B1
1
www.fairchildsemi.com
1 page  
Mechanical Dimensions
TO-126
8.00 ±0.30
3.25 ±0.20
ø3.20 ±0.10
0.75 ±0.10
1.60 ±0.10
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
(1.00)
(0.50)
1.75 ±0.20
0.50
+0.10
–0.05
FJE5304D Rev. B1
Dimensions in Millimeters
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FJE5304D.PDF ] | |
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