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CET - Dual N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CEM7101
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Fabricant CET 
Logo CET 





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CEM7101 fiche technique
CEM7101
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 4A, RDS(ON) = 75m@VGS = 10V.
RDS(ON) = 100m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 D1 D2 D2
876 5
5
SO-8
1
123 4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 30
VGS ±20
ID 4
IDM 16
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
2004.November
5 - 135
http://www.cetsemi.com

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