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CEM4435A fiches techniques PDF

CET - P-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CEM4435A
Description P-Channel Enhancement Mode Field Effect Transistor
Fabricant CET 
Logo CET 





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CEM4435A fiche technique
CEM4435A
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -8A, RDS(ON) = 20m@VGS = -10V.
RDS(ON) = 33m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D
8 7 65
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS -30
VGS ±20
ID -8
IDM -50
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
V
V
A
A
W
C
Units
C/W
Specification and data are subject to change without notice .
5 - 52
Rev 1. 2005.March
http://www.cetsemi.com

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