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Numéro de référence | CEM3307 | ||
Description | P-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | CET | ||
Logo | |||
1 Page
CEM3307
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V.
RDS(ON) = 52mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 D1 D2 D2
876 5
SO-8
1
123 4
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID -6.2
IDM -25
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 2. 2007.Jan
http://www.cetsemi.com
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Pages | Pages 4 | ||
Télécharger | [ CEM3307 ] |
No | Description détaillée | Fabricant |
CEM3301 | P-Channel Enhancement Mode Field Effect Transistor | CET |
CEM3307 | P-Channel Enhancement Mode Field Effect Transistor | CET |
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