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Numéro de référence | CEM3172 | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | CET | ||
Logo | |||
CEM3172
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 8.9A, RDS(ON) = 20mΩ @VGS = 10V.
RDS(ON) = 28mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
DD D D
8 7 65
5
SO-8
1
1 234
S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 30
VGS ±20
ID 8.9
IDM 30
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
50
Units
V
V
A
A
W
C
Units
C/W
Specification and data are subject to change without notice .
1
Rev 1. 2006.April
http://www.cetsemi.com
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Pages | Pages 4 | ||
Télécharger | [ CEM3172 ] |
No | Description détaillée | Fabricant |
CEM3172 | N-Channel Enhancement Mode Field Effect Transistor | CET |
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