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Numéro de référence | CEH2316 | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | CET | ||
Logo | |||
CEH2316
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 6A , RDS(ON) = 34mΩ @VGS = 10V.
RDS(ON) = 50mΩ @VGS = 4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
4
5
6
3
2
1
TSOP-6
G(3)
D(1,2,5,6,)
S(4)
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 30
VGS ±20
ID 6
IDM 24
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
V
V
A
A
W
C
Units
C/W
Rev 1. 2005.December
1
http://www.cetsemi.com
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Pages | Pages 4 | ||
Télécharger | [ CEH2316 ] |
No | Description détaillée | Fabricant |
CEH2310 | N-Channel Enhancement Mode Field Effect Transistor | CET |
CEH2311 | P-Channel Enhancement Mode Field Effect Transistor | CET |
CEH2313 | P-Channel Enhancement Mode Field Effect Transistor | CET |
CEH2316 | N-Channel Enhancement Mode Field Effect Transistor | CET |
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