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PDF FQP6N40CF Data sheet ( Hoja de datos )
| Número de pieza | FQP6N40CF | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQP6N40CF/FQPF6N40CF
400V N-Channel MOSFET
February 2006
FRFET TM
Features
• 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode (typical 70ns)
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, electronic lamp
ballasts based on half bridge topology.
D
GDS
TO-220
FQP Series
Absolute Maximum Ratings
GD S
TO-220F
FQPF Series
www.DataSheet4U.com
G
S
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
FQP6N40CF FQPF6N40CF
400
6 6*
3.6 3.6*
24 24*
± 30
270
6
73
4.5
73 38
0.58 0.3
-55 to +150
300
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQP6N40CF
1.71
0.5
62.5
FQPF6N40CF
3.31
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQP6N40CF/FQPF6N40CF Rev. B
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP6N40CF
100 D =0 .5
0 .2
0 .1
1 0 -1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
1 0 -5
sing le pu lse
N otes :
1.
2.
3.
Z
D
T
θu JtCy(
JM -
t)
F
T
= 1.71 /W M
a
C
ct
=
o r,
PD
MD*=Zt 1θ/
t2
JC
(
t
a
)
x
.
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S quare W ave P ulse D uration [sec]
101
Figure 11-2. Transient Thermal Response Curve for FQPF6N40CF
D =0.5
100
0 .2
0 .1
0 .0 5
1 0 -1
0 .0 2
0 .0 1
1 0 -2
1 0 -5
N otes :
1.
2.
3.
ZD θu JtCy(
T JM -
t)
F
T
= 3.31 /W M
a
C
ct
=
or,
PD
MD*=Zt 1θ/
t
2
JC
(
t
a
)
x
.
sing le p ulse
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S quare W ave P ulse D uration [sec]
101
FQP6N40CF/FQPF6N40CF Rev. B
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FQP6N40CF.PDF ] | |
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