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FQB8N60CF fiches techniques PDF

Fairchild Semiconductor - N-Channel MOSFET

Numéro de référence FQB8N60CF
Description N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FQB8N60CF fiche technique
FQB8N60CF
600V N-Channel MOSFET
Features
• 6.26A, 600V, RDS(on) = 1.5 @VGS = 10 V
• Low gate charge ( typical 28nC)
• Low Crss ( typical 12pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
December 2005
FRFETTM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, electronic lamp ballasts
based on half bridge topology.
D
D
GS
D2-PAK
FQB Series
G
Absolute Maximum Ratings
www.DataSheet4U.com
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2005 Fairchild Semiconductor Corporation
FQB8N60CF Rev. A
1
S
FQB8N60CF
600
6.26
3.96
25
± 30
160
6.26
14.7
4.5
147
1.18
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FQB8N60CF
0.85
40
62.5
Units
°C/W
°C/W
°C/W
www.fairchildsemi.com

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