DataSheetWiki


FJY3008R fiches techniques PDF

Fairchild Semiconductor - NPN Epitaxial Silicon Transistor

Numéro de référence FJY3008R
Description NPN Epitaxial Silicon Transistor
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





1 Page

No Preview Available !





FJY3008R fiche technique
FJY3008R
NPN Epitaxial Silicon Transistor
November 2006
tm
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=47K, R2=22K)
• Complement to FJY4008R
C
E
B
SOT - 523F
C
S08
BE
Eqivalent Circuit
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
www.DataSheet4U.com
IC Collector Current
TSTG
Storage Temperature Range
TJ Junction Temperature
PC Collector Power Dissipation, by RθJA
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Value
50
50
10
100
-55~150
150
200
Thermal Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
RθJA
Thermal Resistance, Junction to Ambient
* Minimum land pad size.
Max
600
Electrical Characteristics* TC = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
V(BR)CBO
Collector-Emitter Breakdown Voltage IC = 10 uA, IE = 0
V(BR)CEO
Collector-Base Breakdown Voltage
IC = 100 uA, IB = 0
ICBO Collector-Cutoff Current
VCB = 40 V, IE = 0
hFE DC Current Gain
VCE = 5 V, IC = 5 mA
VCE(sat)
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA
fT
Current Gain - Bandwidth Product
VCE = 10V, IC = 5 mA
Ccb Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
VI(off)
Input Off Voltage
VCE = 5 V, IC = 100uA
VI(on)
Input On Voltage
VCE = 0.3V, IC = 2mA
R1 Input Resistor
R1/R2
Resistor Ratio
* Pulse Test: PW300µs, Duty Cycle2%
MIN
50
50
56
0.8
32
1.9
Units
V
V
V
mA
°C
°C
mW
Units
°C/W
Typ MAX
0.1
Units
V
V
uA
0.3
250
3.7
4
47 62
2.1 2.4
V
MHz
pF
V
V
K
©2006 Fairchild Semiconductor Corporation
FJY3008R Rev. A
1
www.fairchildsemi.com

PagesPages 4
Télécharger [ FJY3008R ]


Fiche technique recommandé

No Description détaillée Fabricant
FJY3008R NPN Epitaxial Silicon Transistor Fairchild Semiconductor
Fairchild Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche