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PDF FDS8813NZ Data sheet ( Hoja de datos )
| Número de pieza | FDS8813NZ | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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March 2007
FDS8813NZ
N-Channel PowerTrench® MOSFET
30V, 18.5A, 4.5mΩ
tm
Features
General Description
Max rDS(on) = 4.5mΩ at VGS = 10V, ID = 18.5A
Max rDS(on) = 6.0mΩ at VGS = 4.5V, ID =16A
HBM ESD protection level of 5.6kV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and current handling capability
RoHS compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
D
D
D
D
SO-8
Pin 1
D
G www.DataSheet4U.com
S
S
S
D
D
D
G
S
S
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDS8813NZ
Device
FDS8813NZ
Reel Size
13”
(Note 1a)
(Note 4)
(Note 1a)
(Note 1b)
Ratings
30
±20
18.5
74
337
2.5
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
(Note 1)
(Note 1a)
(Note 1b)
25
50
125
°C/W
Tape Width
12mm
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDS8813NZ Rev.C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
3000
1000
VGS = 10V
100
10
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1----5---0-1---2-–--5---T---A---
TA = 25oC
1 SINGLE PULSE
RθJA = 125oC/W
0.1
10-3
10-2 10-1 100 101
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
102
1
DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.001
0.0001
10-3
SINGLE PULSE
RθJA = 125oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 14. Transient Thermal Response Curve
102
103
103
FDS8813NZ Rev.C
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDS8813NZ.PDF ] | |
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