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FDS8817NZ fiches techniques PDF

Fairchild Semiconductor - N-Channel MOSFET

Numéro de référence FDS8817NZ
Description N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS8817NZ fiche technique
March 2007
FDS8817NZ
N-Channel PowerTrench® MOSFET
30V, 15A, 7.0mΩ
Features
„ Max rDS(on) = 7mΩ at VGS = 10V, ID = 15A
„ Max rDS(on) = 10mΩ at VGS = 4.5V, ID =12.6A
„ HBM ESD protection level of 3.8kV typical (note 3)
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability
„ RoHS compliant
tm
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
D
D
D
D
SO-8
Pin 1
D
D
www.DataSheet4U.com
G
SD
S
SD
G
S
S
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDS8817NZ
Device
FDS8817NZ
Reel Size
13”
(Note 1a)
(Note 4)
(Note 1a)
(Note 1b)
Ratings
30
±20
15
60
181
2.5
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
(Note 1)
(Note 1a)
(Note 1b)
25
50
125
°C/W
Tape Width
12mm
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
FDS8817NZ Rev.C
1
www.fairchildsemi.com

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