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Fairchild Semiconductor - N-Channel MOSFET

Numéro de référence FDS8870
Description N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS8870 fiche technique
April 2005
FDS8870
N-Channel PowerTrench® MOSFET
30V, 18A, 4.2m
Features
rDS(ON) = 4.2m, VGS = 10V, ID = 18A
rDS(ON) = 4.9m, VGS = 4.5V, ID = 17A
High performance trench technology for extremely low
rDS(ON)
Low gate charge
High power and current handling capability
Applications
DC/DC converters
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
www.DataSheet4U.com
Branding Dash
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SO-8
5
54
63
72
81
©2005 Fairchild Semiconductor Corporation
FDS8870 Rev. A3
1
www.fairchildsemi.com

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