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Fairchild Semiconductor - N-Channel MOSFET

Numéro de référence FDS8880
Description N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS8880 fiche technique
April 2005
FDS8880
N-Channel PowerTrench® MOSFET
30V, 11.6A, 10m
Features
rDS(ON) = 10m, VGS = 10V, ID = 11.6A
rDS(ON) = 12m, VGS = 4.5V, ID = 10.7A
High performance trench technology for extremely low
rDS(ON)
Low gate charge
High power and current handling capability
Applications
DC/DC converters
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
www.DataSheet4U.com
Branding Dash
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SO-8
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54
63
72
81
©2005 Fairchild Semiconductor Corporation
FDS8880 Rev. A1
1
www.fairchildsemi.com

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