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Fairchild Semiconductor - N-Channel MOSFET

Numéro de référence FDS8884
Description N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS8884 fiche technique
February 2006
FDS8884
N-Channel PowerTrench® MOSFET
30V, 8.5A, 23m
General Descriptions
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
AD FREE I
Features
„ Max rDS(on) = 23mat VGS = 10V, ID = 8.5A
„ Max rDS(on) = 30mat VGS = 4.5V, ID = 7.5A
„ Low gate charge
„ 100% RG Tested
„ RoHS Compliant
DD
D
D
SO-8
S SSG
www.DataSheet4U.com
5
6
7
8
4
3
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current Continuous
Pulsed
(Note 1a)
EAS Single Pulse Avalanche Energy
PD
Power dissipation
Derate above 25oC
(Note 2)
TJ, TSTG
Operating and Storage Temperature
Ratings
30
±20
8.5
40
32
2.5
20
-55 to 150
Units
V
V
A
A
mJ
W
mW/oC
oC
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
(Note 1a)
(Note 1)
50
25
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FDS8884
Device
FDS8884
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDS8884 Rev. A
1
www.fairchildsemi.com

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