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PDF FDP7N50U Data sheet ( Hoja de datos )
| Número de pieza | FDP7N50U | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDP7N50U/FDPF7N50U
500V N-Channel MOSFET
Features
• 5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V
• Low gate charge ( typical 12.8 nC)
• Low Crss ( typical 9 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
March 2007
UniFETTM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
Absolute Maximum Ratings
GD S
TO-220F
FDPF Series
www.DataSheet4U.com
G
S
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
FDP7N50U FDPF7N50U
500
5 5*
3.0 3.0 *
20 20 *
±30
270
5
8.9
4.5
89 39
0.71 0.31
-55 to +150
300
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FDP7N50U
1.4
0.5
62.5
FDPF7N50U
3.2
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FDP7N50U/FDPF7N50U REV. B
1
www.fairchildsemi.com
1 page  
Figure 10-1. Transient Thermal Response Curve - FDP7N50U
100
D = 0 .5
0.2
0.1
1 0 -1
0.05
0.02
0.01
1 0 -2
1 0 -5
single pulse
PDM
t1
t2
Notes :
1 . Z θ JC(t) = 1 .4 /W M a x.
2. D uty Factor, D =t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
1 0 -4
1 0 -3
1 0 -2
10 -1
100
t1, S quare W ave P ulse D uration [sec]
101
Figure 10-2. Transient Thermal Response Curve - FDPF7N50U
D = 0.5
100
0.2
0.1
0.05
1 0 -1
0.02
0.01
1 0 -2
1 0 -5
single pulse
PDM
t1
t2
N otes :
1 . Z θ JC(t) = 3 .2 /W M a x.
2. D uty Factor, D =t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
1 0 -4
1 0 -3
1 0 -2
10 -1
100
t1, S quare W ave P ulse D uration [sec]
101
FDP7N50U/FDPF7N50U REV. B
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FDP7N50U.PDF ] | |
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