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PDF FDPF18N50 Data sheet ( Hoja de datos )
| Número de pieza | FDPF18N50 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDP18N50 / FDPF18N50 / FDPF18N50T
N-Channel UniFETTM MOSFET
500 V, 18 A, 265 mΩ
November 2013
Features
• RDS(on) = 220 mΩ (Typ.) @ VGS = 10 V, ID = 9 A
• Low Gate Charge (Typ. 45 nC)
• Low Crss (Typ. 25 pF)
• 100% Avalanche Tested
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
GDS
TO-220
GDS
TO-220F
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
S
Symbol
Parameter
FDP18N50
FDPF18N50 /
FDPF18N50T
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
18
10.8
72
500
±30
945
18
23.5
4.5
18 *
10.8 *
72 *
PD
TJ, TSTG
TL
Power Dissipation
(TC = 25°C)
- Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
235
1.88
-55 to +150
38.5
0.3
300
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDP18N50
0.53
62.5
FDPF18N50 /
FDPF18N50T
3.3
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2012 Fairchild Semiconductor Corporation
FDP18N50 / FDPF18N50 / FDPF18N50T Rev. C2
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve - FDP18N50
100
D =0.5
1 0 -1
1 0 -2
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
single pulse
PDM
* N o te s :
t1
t2
1 . Z θJC(t) = 0.53 oC /W M ax.
2 . D u ty F actor, D = t1/t2
3 . T JM - T C = P DM * Z θJC(t)
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q u a re W a ve P u ls e D u ra tio n [s e c ]
1
101
Figure 11-2. Transient Thermal Response Curve - FDPF18N50 / FDPF18N50T
D =0.5
100
0 .2
0 .1
0 .0 5
1 0 -1
0 .0 2
0 .0 1
1 0 -2 s in g le p u ls e
PDM
* N o te s :
t1
t2
1 . Z θJC(t) = 3.3 oC /W M ax.
2 . D u ty F actor, D = t1/t2
3 . T JM - T C = P DM * Z θJC(t)
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
101
©2012 Fairchild Semiconductor Corporation
FDP18N50 / FDPF18N50 / FDPF18N50T Rev. C2
5
www.fairchildsemi.com
5 Page 
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| PDF Descargar | [ Datasheet FDPF18N50.PDF ] | |
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