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Fairchild Semiconductor - N-Channel UltraFET Trench MOSFET

Numéro de référence FDMS2734
Description N-Channel UltraFET Trench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDMS2734 fiche technique
February 2007
FDMS2734
N-Channel UltraFET Trench® MOSFET
250V, 14A, 122m
Features
General Description
tm
„ Max rDS(on) = 122mat VGS = 10V, ID = 2.8A
„ Max rDS(on) = 130mat VGS = 6V, ID = 1.7A
„ Low Miller Charge
„ Optimized efficiency at high frequencies
„ RoHS Compliant
UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Application
„ DC - DC Conversion
Pin 1
S S SG
DD DD
Power 56 (Bottom view)
D5
D6
www.DataSheet4U.com
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
PD
TJ, TSTG
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
250
±20
14
2.8
16
78
2.5
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.6
50
°C/W
Device Marking
FDMS2734
Device
FDMS2734
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDMS2734 Rev.C
1
www.fairchildsemi.com

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