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FDMB3800N fiches techniques PDF

Fairchild Semiconductor - Dual N-Channel PowerTrench MOSFET

Numéro de référence FDMB3800N
Description Dual N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDMB3800N fiche technique
January 2006
FDMB3800N
Dual N-Channel PowerTrench® MOSFET
4.8A, 30V, 40m
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
AD FREE I
Features
„ RDS(ON) = 40 m@ VGS = 10 V
RDS(ON) = 51 m@ VGS = 4.5 V
„ Fast switching speed
„ Low gate charge
„ High performance trench technology for extremely low
RDS(ON)
„ High power and current handling capability.
„ RoHS Compliant
GATE SOURCE
www.DataSheet4U.com
5
6
7
8
Q1
4
3
Q2
2
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
(Note 1a)
PD
Power dissipation for Single Operation
Power dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
3800
Device
FDMB3800N
Reel Size
7inch
Tape Width
8mm
©2006 Fairchild Semiconductor Corporation
FDMB3800N Rev. C
1
Ratings
30
±20
4.8
9
1.6
0.75
-55 to +150
Units
V
V
A
W
°C
80
165 °C/W
Quantity
3000 units
www.fairchildsemi.com

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