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FDMA520PZ fiches techniques PDF

Fairchild Semiconductor - Single P-Channel PowerTrench MOSFET

Numéro de référence FDMA520PZ
Description Single P-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDMA520PZ fiche technique
January 2007
FDMA520PZ
Single P-Channel PowerTrench® MOSFET
–20V, –7.3A, 30mΩ
tm
Features
General Description
„ Max rDS(on) = 30mΩ at VGS = –4.5V, ID = –7.3A
„ Max rDS(on) = 53mΩ at VGS = –2.5V, ID = –5.5A
„ Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
„ RoHS Compliant
This device is designed specifically for battery charge or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
Pin 1
Drain
DD G
Source
Bottom Drain Contact
D1
6D
D
www.DataSheet4U.com
2
5D
G3
4S
DD S
MicroFET 2X2 (Bottom View)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–20
±12
–7.3
–24
2.4
0.9
–55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
52
145
°C/W
Device Marking
520
Device
FDMA520PZ
Package
MicroFET 2X2
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMA520PZ Rev.B
1
www.fairchildsemi.com

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