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PDF FDFMA2P857 Data sheet ( Hoja de datos )
| Número de pieza | FDFMA2P857 | |
| Descripción | Integrated P-Channel PowerTrench MOSFET and Schottky Diode | |
| Fabricantes | Fairchild Semiconductor | |
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February 2007
FDFMA2P857
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
–20V, –3.0A, 120mΩ
Features
General Description
MOSFET:
Max rDS(on) = 120mΩ at VGS = –4.5V, ID = –3.0A
Max rDS(on) = 160mΩ at VGS = –2.5V, ID = –2.5A
Max rDS(on) = 240mΩ at VGS = –1.8V, ID = –1.0A
Schottky:
VF < 0.54V @ 1A
Low profile - 0.8 mm maximum - in the new pack-
age MicroFET 2x2 mm
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra-
portable applications. It features a MOSFET with low on-state
resistance and an independently connected low forward voltage
schottky diode for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for it’s physical size and is well suited to linear
mode applications.
RoHS Compliant
Pin 1
A NC D
A1
6C
www.DataSheet4U.com
NC 2
5G
D3 4S
MicroFET 2x2
CG S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
PD
TJ, TSTG
VRRM
IO
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
–3
–6
1.4
0.7
–55 to +150
30
1
Units
V
V
A
W
°C
V
A
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
.857
Device
FDFMA2P857
Package
MicroFET 2x2
©2007 Fairchild Semiconductor Corporation
FDFMA2P857 Rev.B
1
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86
173
86
140
°C/W
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
www.fairchildsemi.com
1 page  
Typical Characteristics TA = 25°C unless otherwise noted
5
ID = -3A
4
3
VDS= -5V
-15V
2 -10V
1
0
01234
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
5
700
600
f = 1MHz
VGS = 0V
500
400
Ciss
300
200
Coss
100
Crss
0
04
8 12 16
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
20
1010
RDS(ON) LIMITED
100us
1 1ms
10ms
0.1 VGS = -4.5V
SINGLE PULSE
RθJA = 173oC/W
TA = 25oC
0.01
0.1
1
100ms
1s
10s
DC
10
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
100
3
1
TJ = 125oC
0.1
85oC
0.01
25oC
0.001
0
100 200 300 400 500
VF, FORWARD VOLTAGE(mV)
600
Figure 11. Schottky Diode Forward Current
200
100
10
1
SINGLE PULSE
RθJA = 173oC/W
0.1
10-4 10-3 10-2 10-1 100 101 102
t, PULSE WIDTH (s)
Figure 10. Single Pulse Maximum
Power Dissipation
103
10
TJ = 125oC
1
0.1
0.01
TJ = 85oC
0.001
0.0001
0
TJ = 25oC
5 10 15 20 25
VR, REVERSE VOLTAGE (V)
30
Figure 12. Schottky Diode Reverse Current
FDFMA2P857 Rev.B
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDFMA2P857.PDF ] | |
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