|
|
PDF FDFC2P100 Data sheet ( Hoja de datos )
| Número de pieza | FDFC2P100 | |
| Descripción | Integrated P-Channel PowerTrench MOSFET and Schottky Diode | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDFC2P100 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
October 2006
FDFC2P100
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
-20V, -3A, 150mΩ
Features
General Description
Max rDS(on) = 150mΩ at VGS = -4.5V, ID = -3.0A
Max rDS(on) = 200mΩ at VGS = -2.5V, ID = -2.2A
Low Gate Charge (3.4nC typ)
Compact industry standard SuperSOTTM-6 package
Schottky:
VF < 0.45 V at IF = 1A
RoHS Compliant
The FDFC2P100 combine the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very low
forward voltage drop Schottky barrier rectifier in an SSOT-6
package.
This device is designed specifically as a single package solution
for DC to DC converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance. Significant
improvement of Thermal Characteristics and Power Dissipation
via replacement of independently connected Schottky with
internal connection of Schottky Diode Cathode pn to P-Channel
PowerTrench MosFET Drain pin.
www.DataSheet4U.com
PIN 1
SuperSOTTM-6
C/D 4
C/D 5
C/D 6
3G
2S
1A
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Parameter
VRRM
IO
TJ, TSTG
Schotty Repetitive Peak Reverse Voltage
Schotty Average Forward Current
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
Ratings
-20
±12
-3
-6
1.5
0.8
20
1
-55 to +150
Units
V
V
A
W
V
A
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
87
166
°C/W
Device Marking
.100
Device
FDFC2P100
Package
SSOT-6
Reel Size
7”
Tape Width
8mm
Quantity
3000units
©2006 Fairchild Semiconductor Corporation
FDFC2P100 Rev.C (W)
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
5
ID = - 3A
4
VDD = - 5V
500
f = 1MHz
400
Ciss
VGS = 0V
3
VDD = -10V
300
2 VDD = -15V
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
200
Coss
100
Crss
0
0 5 10 15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. CapacitancevsDrain
to Source Voltage
20
1
TJ = 125oC
0.1
0.01
1E-3
TJ = 100oC
TJ = 25oC
0.1
0.01
1E-3
1E-4
TJ = 125oC
TJ = 100oC
TJ = 25oC
1E-4
0.0
0.1 0.2 0.3
VF, FORWARD VOLTAGE (V)
0.4
Figure 9. Schottky Diode Forward Voltage
1E-5
0
5 10 15 20
VR, REVERSE VOLTAGE(V)
Figure 10. Schottky Diode Reverse Current
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
1E-3
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Transient Thermal Response Curve
102
103
FDFC2P100 Rev.C (W)
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDFC2P100.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDFC2P100 | Integrated P-Channel PowerTrench MOSFET and Schottky Diode | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |