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PDF FDI33N25 Data sheet ( Hoja de datos )
| Número de pieza | FDI33N25 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FDB33N25 / FDI33N25
250V N-Channel MOSFET
Features
• 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V
• Low gate charge ( typical 36.8 nC)
• Low Crss ( typical 39 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
May 2006
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
D
GS
D2-PAK
FDB Series
Absolute Maximum Ratings
GDS
I2-PAK
FDI Series
www.DataSheet4U.com
G
S
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FDB33N25 / FDI33N25
250
33
20.4
132
±30
918
33
23.5
4.5
235
1.89
-55 to +150
300
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθJA*
Thermal Resistance, Junction-to-Ambient*
RθJA
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Min.
--
--
--
Max.
0.53
40
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FDB33N25 / FDI33N25 Rev A
1
www.fairchildsemi.com
1 page  
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDB33N25 / FDI33N25 Rev A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDI33N25.PDF ] | |
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