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FDAF69N25 fiches techniques PDF

Fairchild Semiconductor - N-Channel MOSFET

Numéro de référence FDAF69N25
Description N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDAF69N25 fiche technique
FDAF69N25
250V N-Channel MOSFET
Features
• 34A, 250V, RDS(on) = 0.041@VGS = 10 V
• Low gate charge ( typical 77 nC)
• Low Crss ( typical 84 pF)
• Fast switching
• Improved dv/dt capability
September 2005
UniFET TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switching DC/DC converters and switched mode power
supplies.
G DS
TO-3PF
FQAF Series
D
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z

G{
z
z
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S
Absolute Maximum Ratings
www.DataSheet4U.com
Symbol
VDSS
VDS(Avalanche)
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Repetitive Avalanche Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
(Note 2)
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FDAF69N25
250
300
34
21.5
136
±30
1894
34
11.5
4.5
115
0.93
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min.
--
0.24
--
Max.
1.08
--
40
Unit
V
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FDAF69N25 Rev. A
1
www.fairchildsemi.com

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