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FDA69N25 fiches techniques PDF

Fairchild Semiconductor - N-Channel MOSFET

Numéro de référence FDA69N25
Description N-Channel MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDA69N25 fiche technique
FDA69N25
250V N-Channel MOSFET
Features
• 69A, 250V, RDS(on) = 0.041@VGS = 10 V
• Low gate charge ( typical 77 nC)
• Low Crss ( typical 84pF)
• Fast switching
• Improved dv/dt capability
May 2006
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
G DS
TO-3P
FDA Series
Absolute Maximum Ratings
www.DataSheet4U.com
Symbol
VDSS
VDS(Avalanche)
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Repetitive Avalanche Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
(Note 2)
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2006 Fairchild Semiconductor Corporation
FDA69N25 Rev. A
1
S
FDA69N25
250
300
69
44.2
276
± 30
1894
69
48
4.5
480
3.84
-55 to +150
300
Units
V
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FDA69N25
0.26
40
Units
°C/W
°C/W
www.fairchildsemi.com

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