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PDF BCV71 Data sheet ( Hoja de datos )
| Número de pieza | BCV71 | |
| Descripción | NPN General Purpose Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
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BCV71
NPN General Purpose Amplifier
• This device is designed for general purpose applications at collector
currents to 300mA.
• Sourced from process 10.
3
2
1
SOT-23
Mark: K7
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector current (DC)
TJ, Tstg
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
60
80
5.0
500
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
www.DataSheet4U.com
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
On Characteristics
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCB = 20V, IE = 0
VCB = 20V, IE = 0, Ta = 100°C
hFE
VCE(sat)
VBE(on)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 2.0mA, VCE = 5.0V
IC = 10mA, IB = 0.5mA
IC = 2.0mA, VCE = 5.0V
Min. Typ.
80
60
5.0
110
0.55
Units
V
V
V
mA
°C
Max. Units
V
V
V
100 nA
10 µA
220
0.25 V
0.7 V
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Device mounted on FR-4PCB 40mm × 40mm × 1.5mm
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BCV71.PDF ] | |
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