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PDF IRHNJ7430SE Data sheet ( Hoja de datos )
| Número de pieza | IRHNJ7430SE | |
| Descripción | RADIATION HARDENED POWER MOSFET SURFACE MOUNT | |
| Fabricantes | International Rectifier | |
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Hay una vista previa y un enlace de descarga de IRHNJ7430SE (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
PD - 93830B
IRHNJ7430SE
JANSR2N7466U3
500V, N-CHANNEL
REF: MIL-PRF-19500/676
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHNJ7430SE 100K Rads (Si)
RDS(on)
1.77Ω
ID
4.4A
QPL Part Number
JANSR2N7466U3
International Rectifier’s RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
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DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
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SMD-0.5
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
4.4
2.8
17.6
75
0.6
±20
150
4.4
7.5
2.5
-55 to 150
300 (for 5s)
1.0(Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
02/07/03
1 page  
Pre-Irradiation
IRHNJ7430SE, JANSR2N7466U3
1200
900
600
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
300
0
1
Coss
Crss
10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 44..45AA
16
VDS = 400V
VDS = 250V
VDS = 100V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 8 16 24 32 40
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150° C
10
1
TJ = 25 ° C
0.1
0.4
VGS = 0 V
0.8 1.2
VSD ,Source-to-Drain Voltage (V)
1.6
Fig 7. Typical Source-Drain Diode
Forward Voltage
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100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10 10us
100us
1
1ms
TC = 25°C
TJ = 150° C
Single Pulse
0.1
10
100
10ms
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHNJ7430SE.PDF ] | |
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