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PDF AAT8515 Data sheet ( Hoja de datos )
| Número de pieza | AAT8515 | |
| Descripción | P-Channel Power MOSFET | |
| Fabricantes | AAT | |
| Logotipo |  |
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General Description
The AAT8515 is a low threshold P-channel MOSFET
designed for the battery, cell phone, and PDA mar-
kets. Using AnalogicTech's ultra-high-density MOS-
FET process and space-saving, small-outline, J-lead
package, performance superior to that normally
found in a TSOP-6 footprint has been squeezed into
the footprint of an SC70JW-8 package.
Applications
• Battery Packs
• Battery-Powered Portable Equipment
• Cellular and Cordless Telephones
AAT8515
20V P-Channel Power MOSFET
Features
• Drain-Source Voltage (max): -20V
• Continuous Drain Current1 (max):
-5.4A @ 25°C
• Low On-Resistance:
— 35mΩ @ VGS = -4.5V
— 60mΩ @ VGS = -2.5V
SC70JW-8 Package
Top View
DDDD
8765
Absolute Maximum Ratings
TA = 25°C, unless otherwise noted.
Symbol
VDS
VGS
ID
IDM
IS
TJ
TSTG
Description
Drain-Source Voltage
Gate-Source Voltage
www.DataSheet4U.com
Continuous Drain Current @ TJ = 150°C1
Pulsed Drain Current2
Continuous Source Current (Source-Drain Diode)1
Operating Junction Temperature Range
Storage Temperature Range
1234
SSSG
TA = 25°C
TA = 70°C
Value
-20
±12
±5.4
±4.3
±32
-1.5
-55 to 150
-55 to 150
Thermal Characteristics1
Symbol
RθJA
RθJA2
RθJF
PD
Description
Junction-to-Ambient Steady State
Junction-to-Ambient t<5 Seconds
Junction-to-Foot
Maximum Power Dissipation
TA = 25°C
TA = 70°C
Typ Max
100 120
61 73.5
33 40
1.7
1.0
Units
V
A
°C
°C
Units
°C/W
°C/W
°C/W
W
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
8515.2005.04.1.0
1
1 page  
AAT8515
20V P-Channel Power MOSFET
Ordering Information
Package
SC70JW-8
Marking1
GTXYY
Part Number (Tape and Reel)2
AAT8515IJS-T1
Package Information
SC70JW-8
0.50 BSC 0.50 BSC 0.50 BSC
0.225 ± 0.075
2.00 ± 0.20
7° ± 3°
All dimensions in millimeters.
0.100
0.048REF
0.45 ± 0.10
4° ± 4°
2.10 ± 0.30
1. XYY = assembly and date code.
2. Sample stock is generally held on part numbers listed in BOLD.
8515.2005.04.1.0
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AAT8515.PDF ] | |
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