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PDF AAT8660 Data sheet ( Hoja de datos )

Número de pieza AAT8660
Descripción ONE-CELL LI-ION BATTERY PROTECTION IC
Fabricantes AAT 
Logotipo AAT Logotipo



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No Preview Available ! AAT8660 Hoja de datos, Descripción, Manual

Advanced Analog Technology, Inc.
AAT8660 Series
Details are subject to change without notice.
ONE-CELL LI-ION BATTERY PROTECTION IC
FEATURES
GENERAL DESCRIPTION
z Ideal for One-Cell Rechargeable Li-Ion
Battery Packs
z High Accuracy Voltage Detection
z Low Current Consumption:
3µA Supply Current (Typical)
The AAT8660 series are designed to protect
one-cell rechargeable Li-Ion battery pack against
over-charge, over-discharge, over-current and
short circuit. They use CMOS process to provide
high accuracy voltage detection and low current
0.1µA Shutdown Current
z 3-Level Over Current Detection:
Over-Current Level 1 /Over Current Level 2 /
Short Circuit
consumption.
Each of the AAT8660 devices incorporates
voltage comparators, bandgap reference voltage
generator, signal delay circuit, short circuit
z Wide Operating Temperature
40o C to + 85o C
z Small SOT26 Package
PIN CONFIGURATION
Range: detector, and digital control circuit.
In the charge process, when the battery voltage is
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charged to a value greater than VC1(Over-Charge
Threshold Voltage), the output of Cout pin
switches to the low level, i.e., the VN pin level.
The output of Cout pin will switch to high level
when the battery voltage falls lower than VC2
(Over-Charge Release Voltage), or when the
charger is disconnected from the battery pack and
D out
GND
the battery voltage level ranges between VC1 and
VC2.
VN
VDD
During the discharge process, when the battery
voltage drops to a value lower than VD1
C out
NULL
(Over-Discharge Threshold Voltage), the output
of Dout pin switches to low level immediately
after the internal delay time elapses. The output
of Dout pin will switch to high level when the
battery voltage is at a level higher than VD2
(Over-Discharge Release Voltage).
––
Advanced Analog Technology, Inc.
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AAT8660 pdf
Advanced Analog Technology, Inc.
AAT8660 Series
AAT8660B DETECTION VOLTAGE AND DELAY TIME (25 )
PARAMETER
SYMBOL TEST CONDITION
Over Charge Threshold Voltage
VC1 Detect Rising Edge of Supply
Voltage
Over Charge Release Voltage
VC2 Detect Falling Edge of Supply
Voltage
Over Discharge Threshold
Voltage
VD1
Detect Falling Edge of Supply
Voltage
Over Discharge Release Voltage
VD2
Detect Rising Edge of Supply
Voltage
Over Charge Delay Time
t C1 VDD = 3.6V to 4.5V
Over Discharge Delay Time
t D1 VDD = 3.6V to 2.4V
Detect Rising Edge of “VN” Pin
Over Current Level 1 Detection
Voltage
VOC1
Voltage ( D out Response with
t OC1 Delay Time)
Over Current Level 2 Detection
Voltage
Short Circuit Detection Voltage
VOC2
Vshort
Detect Rising Edge of “VN”
Pin Voltage ( D out Response
with tOC2 Delay Time)
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage
( D out Response with t short
Delay Time)
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
Room Temp.
Over Current Level 2 Detection
Delay Time
t OC2
Low or High Temp.
VDD = 3.0V
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
Charger Detection Voltage
VCHR
Detect Rising Edge of “ D out
Pin Voltage
(when VD1 VDD VD2)
Cout High Level Resistance
R COH
VDD = 3.5V ; C OUT = 3.0V ;
VN = 0V
Cout Low Level Resistance
R COL
VDD = 4.5V ;
COUT = 0.5V ; VN = 0V
D out High Level Resistance
R DOH
VDD = 3.5V ; D out = 3.0V ;
VN = 0V
D out Low Level Resistance
R DOL
VDD = 1.8V ;
D out = 0.5V ; VN = 1.8V
Internal Resistance between VN
and VDD
R VND
VDD = 1.8V ; VN = 0V
Internal Resistance between VN
and GND
R VNG
VDD = 3.5V ; VN = 3.5V
MIN
4.300
VC1-0.30
2.220
VD1+0.6
0.088
22.4
130
400
VDD 1.7
2.8
1.4
1.1
2.0
1
150
2.5
2.5
100
10
TYP
4.350
VC1-0.20
2.300
VD1+0.7
0.125
32.0
150
500
VDD 1.3
4.0
2.0
2.0
10
1.3
2
602
5.0
5.0
300
20
MAX
4.400
VC1-0.10
2.380
VD1+0.8
0.163
41.6
170
600
VDD 0.9
5.2
2.6
3.4
50
0.6
10
2,380
10.0
10.0
900
40
UNIT
V
V
V
V
s
ms
mV
mV
V
ms
ms
ms
µs
V
k
k
k
k
k
k
––
Advanced Analog Technology, Inc.
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AAT8660 arduino
Advanced Analog Technology, Inc.
AAT8660 Series
AAT8660H DETECTION VOLTAGE AND DELAY TIME (25 )
PARAMETER
SYMBOL TEST CONDITION MIN TYP MAX
Over Charge Threshold Voltage
VC1 Detect Rising Edge of Supply
Voltage
4.250 4.300 4.350
Over Charge Release Voltage
VC2
Detect Falling Edge of Supply
Voltage
VC1-0.30 VC1-0.20 VC1-0.10
Over Discharge Threshold
Voltage
VD1
Detect Falling Edge of Supply
Voltage
2.220 2.300 2.380
Over Discharge Release Voltage
VD2
Detect rising Edge of Supply
Voltage
VD1-0.08 VD1 VD1+0.08
Over Charge Delay Time
t C1 VDD = 3.6V to 4.5V
0.700 1.000 1.300
Over Discharge Delay Time
t D1 VDD = 3.6V to 2.4V
87.5 125.0 162.5
Detect Rising Edge of “VN” Pin
Over Current Level 1 Detection
Voltage
VOC1
Voltage ( D out Response with
t OC1 Delay time)
130 150 170
Detect rising Edge of “VN”
Over Current Level 2 Detection
Voltage
VOC2
Pin Voltage ( D out Response
With t OC2 Delay Time)
400 500 600
Short Circuit Detection Voltage
Vshort
VDD = 3.0V , Detect Rising Edge
of “VN” Pin Voltage ( D out
Response with tshort Delay
VDD 1.7
VDD 1.3
VDD 0.9
Time)
Over Current Level 1 Detection
Delay Time
t OC1
VDD = 3.0V
5.6 8.0 10.4
Room Temp.
Over Current Level 2 Detection
Delay Time
t OC2
Low or High Temp.
VDD = 3.0V
1.4 2.0 2.6
1.1 2.0 3.4
Short Circuit Detection Delay
Time
t short
VDD = 3.0V
10 50
Charger Detection Voltage
Detect Rising Edge of “ D out
VCHR
Pin Voltage
-2.0 -1.3 -0.6
(when VD1 VDD VD2)
Cout High Resistance Level
R COH
VDD = 3.5V ;
Cout = 3.0V ;VN=0V
1 2 10
Cout Low Resistance Level
R COL
VDD = 4.5V ;
Cout = 0.5V ;VN=0V
150 602 2,380
D out High Resistance Level
R DOH
VDD = 3.5V ;
D out = 3.0V ;VN=0V
2.5 5.0 10.0
D out Low Resistance Level
R DOL
VDD = 1.8V ;
D out = 0.5V ;VN=1.8V
2.5 5.0 10.0
Internal Resistance between VN
and VDD
R VND
VDD = 1.8V ; VN=0V
100 300 900
Internal Resistance between VN
and GND
R VNG VDD = 3.5V ; VN=3.5V
10 20 40
UNIT
V
V
V
V
s
ms
mV
mV
V
ms
ms
ms
µs
V
k
k
k
k
k
k
––
Advanced Analog Technology, Inc.
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