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Numéro de référence | AAT7126 | ||
Description | N-Channel Power MOSFET / Transistor | ||
Fabricant | AAT | ||
Logo | |||
General Description
The AAT7126 30V N-Channel Power MOSFET is a
member of AnalogicTech™'s TrenchDMOS™
product family. Using the ultra-high density propri-
etary TrenchDMOS technology, this product
demonstrates high power handling and small size.
AAT7126
30V N-Channel Power MOSFET
Features
• VDS(MAX) = 30V
• ID(MAX) 1 = 6.8A @ 25°C
• Low RDS(ON):
• 26 mΩ @VGS = 10V
• 41 mΩ @ VGS = 4.5V
Applications
• Battery-powered portable equipment
• Laptop computers
• Desktop computers
• DC/DC converters
Dual SOP-8 Package
Top View
D1 D1 D2 D2
8765
www.DataSheet4U.com
1234
S1 G1 S2 G2
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=150°C 1
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Source-Drain Diode) 1
Maximum Power Dissipation 1
TA = 25°C
TA = 70°C
Operating Junction and Storage Temperature Range
Value
30
±20
±6.8
±5.4
±24
1.7
2.0
1.25
-55 to 150
Units
V
A
W
°C
Thermal Characteristics
Symbol
RθJA
RθJA2
RΘJC
Description
Typical Junction-to-Ambient steady state, one FET on
Industry Standard Junction-to-Ambient Figure, t < 10 sec.
Typical Junction-to-Case, one FET on
Value
100
62.5
35
Units
°C/W
°C/W
°C/W
7126.2002.10.0.9
1
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Pages | Pages 4 | ||
Télécharger | [ AAT7126 ] |
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