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AAT7157 fiches techniques PDF

AAT - P-Channel Power MOSFET

Numéro de référence AAT7157
Description P-Channel Power MOSFET
Fabricant AAT 
Logo AAT 





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AAT7157 fiche technique
General Description
The AAT7157 low threshold 20V, dual P-Channel
MOSFET is a member of AnalogicTech™'s
TrenchDMOS™ product family. Using an ultra-high
density proprietary TrenchDMOS technology the
AAT7157 is designed for use as a load switch in
battery powered applications and protection in bat-
tery packs.
Applications
• Battery Packs
• Battery-powered portable equipment
AAT7157
20V P-Channel Power MOSFET
Features
• VDS(MAX) = -20V
• ID(MAX) 1 = -5.8A @ 25°C
• Low RDS(ON):
• 36 m@ VGS = -4.5V
• 62 m@ VGS = -2.5V
Dual SOP-8L Package
Top View
D1 D1 D2 D2
8765
www.DataSheet4U.com
1234
S1 G1 S2 G2
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TJ=150°C 1
Pulsed Drain Current 2
Continuous Source Current (Source-Drain Diode) 1
Maximum Power Dissipation 1
Operating Junction and Storage Temperature Range
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Value
-20
±12
±5.8
±4.6
±24
-1.5
2.0
1.25
-55 to 150
Thermal Characteristics
Symbol
RθJA
RθJA2
RθJF
Description
Typical Junction-to-Ambient steady state 1
Maximum Junction-to-Ambient t<10 seconds 1
Typical Junction-to-Foot 1
Value
100
62.5
35
Units
V
A
W
°C
Units
°C/W
7157.2004.04.1.0
1

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